MF163000 - SEMI MF1630 - Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities StdPbc-0309 distribution system

distribution system

SEMI M57-0316 (technical revision)

will be delineated in supporting ‘dot’ specifications to this Standard

SEMI F61-0617 (complete rewrite)

MF163000 - SEMI MF1630 - Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities StdPbc-0309 distribution systemThis Test Method covers the determination of electrically active boron, phosphorus, arsenic, aluminum, antimony, and gallium concentration in single crystal silicon. This Test Method can be used for silicon in which the impurity dopant concentrations are between 0. 01 ppba and 5 ppba for each of the electrically active elements. The concentration for each impurity dopant can be obtained by application of Beers Law. Calibration factors are given for