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On-Demand - Sustainability and EHS Summit 2023 StdPbc-0115 SEMI T20-0710 (designation update)

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SEMI T20-0710 (designation update)

Thermally grown gate oxide film with gate oxide thicknesses of 20 to 25 nm and polysilicon electrode is used to make a MOS capacitor

SEMI PV22 — Specification for Silicon Wafers for Use as Photovoltaic Solar Cells

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On-Demand - Sustainability and EHS Summit 2023 StdPbc-0115 SEMI T20-0710 (designation update)

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