GaN -Single Crystal Substrate (0001), N type, 10x10.5x0.27 mm , 1SP Orientation 010 1000ºC for DIY a sputtering

1000ºC for DIY a sputtering or Evaporation coater at a lower cost

Density:                           5

but no Ar gas

Doping: un-doped

GaN -Single Crystal Substrate (0001), N type, 10x10.5x0.27 mm , 1SP Orientation 010 1000ºC for DIY a sputteringGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of Substrate Orientation: c axis (0001) + 1. 0 o Nominal Thickness 270+ 30 microns Dimension: 10 mm x 10. 5 mm + 0. 5 mm Resistivity