Si Wafer (100), 4 " dia x 0.525 mm, 1SP, N Type, Sb doped, R:0.01-0.02 ohm.cm - SISba101D05C1R001 Sc Windows 2000

Windows 2000

If you need a larger quantity or have questions about IP

Working temperature: 1700°C (in air

a 20mm cutting die can be used for cutting electrode discs and a 24mm cutting die can be used for cutting either electrode discs or separator discs

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, N Type, Sb doped, R:0.01-0.02 ohm.cm - SISba101D05C1R001 Sc Windows 2000Single crystal Si, Conductivity: N type ( Sb doped) Resistivity: 0. 01 0. 02 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter x 0. 525 mm Orientation: (100) Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single Crystal Substrate DS 01 Micro