GaN Template on Sapphire(0001) 5 x 5 mm x 0.5mm,1sp .GaN Film:4- 5um Pouch Cell Subject to the applicable aluminum

Subject to the applicable aluminum foil standard

Precaution:  R plane sapphire wafer is easy to cleave compared with C plane's

Water absorption: 2%

The compaction desnity is 1

GaN Template on Sapphire(0001) 5 x 5 mm x 0.5mm,1sp .GaN Film:4- 5um Pouch Cell Subject to the applicable aluminumGaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate Specifications Size : 5mmx5mm Substrate Sapphire, Orientation C (0001) + 1. 0 o Conduction Type: n type, Resistivity < 0. 5 Ohm cm Front Surface Finish (Ga Face) As grown Back Surface