A Polishing: one side polishd Resistivities: 5. 1x10^ 2 ohm cm Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (111) A Orientation Flat SEMI Doping Zn doped Conductivity type P type Carrier Concentration 6. 4E17 cm3 Mobility 192 cm2 V. S Resistivity 5. 1x10^ 2 Ohm Cm EPD 1. 9E4 cm 2"> A Polishing: one side polishd Resistivities: 5. 1x10^ 2 ohm cm Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (111) A Orientation Flat SEMI Doping Zn doped Conductivity type P type Carrier Concentration 6. 4E17 cm3 Mobility 192 cm2 V. S Resistivity 5. 1x10^ 2 Ohm Cm EPD 1. 9E4 cm 2"> A Polishing: one side polishd Resistivities: 5. 1x10^ 2 ohm cm Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (111) A Orientation Flat SEMI Doping Zn doped Conductivity type P type Carrier Concentration 6. 4E17 cm3 Mobility 192 cm2 V. S Resistivity 5. 1x10^ 2 Ohm Cm EPD 1. 9E4 cm 2"> InAs (111)A, P Type, Zn doped 5x5 x 0.45 mm, one side polished - IAZncA0505045S1US5 Mounting Presses Overall dimension: 68"W x 32"D – www.bonetti-buttons.it

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InAs (111)A, P Type, Zn doped 5x5 x 0.45 mm, one side polished - IAZncA0505045S1US5 Mounting Presses Overall dimension: 68"W x 32"D

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Description

Overall dimension: 68"W x 32"D x 57"H

8 mm) Tube Length 700 mm

Working Temperature 1100ºC Max

30mm  Note:

InAs (111)A, P Type, Zn doped 5x5 x 0.45 mm, one side polished - IAZncA0505045S1US5 Mounting Presses Overall dimension: 68"W x 32"D2" InAs wafer (P type) 2" InAs wafer P Type, Zn doped Size: 5x5x0. 45 mm + 20 microns Orientation: <111>A Polishing: one side polishd Resistivities: 5. 1x10^ 2 ohm cm Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (111) A Orientation Flat SEMI Doping Zn doped Conductivity type P type Carrier Concentration 6. 4E17 cm3 Mobility 192 cm2 V. S Resistivity 5. 1x10^ 2 Ohm Cm EPD 1. 9E4 cm 2

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