GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.3 mm , 2SP BaF2

GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.3 mm , 2SP BaF2GaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of Substrate Orientation: c axis (0001) + 1. 0 o Type: N type(undoped) Nominal Thickness 300+ 25 microns Dimension: 10 mm x 10. 5 mm

5 - 5V programmable

Surface finish  (RMS or Ra) :  < 5A

( Qty discount )

CR2032 case and spacer shown in picture is not included

Dimensions (Dia x Height) Case: 21

Testing Station (Optional)

247 deg F )

please purchase separately

Growing Method:             CZ

Tubing Replacements

and one of the advantage from water-based (Aqueous) chemistry is it isn't prone to catching fire

0 mm Width 3