GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5 Aluminum Film How to install Dimension Optional

How to install Dimension Optional  This device is for MTI ultrasonic spray head only

Shipping Weight: 160 lbs (Note: This heavy-duty cart needs to be shipped via freight

One piece of 12123 aluminum case

Time Range: 365 * 24 hours

GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5 Aluminum Film How to install Dimension OptionalGaAs single crystal wafer Growing Method: VGF Orientation: (100)+ 0. 5 degree Size: 3" dia x 0. 625mm Polishing: two sides polished Doping: Si doped Conductor type: S C N Carrier Concentration: (1. 06 3. 96) x 10^18 cm^3 Mobility: 1420 2480 cm^2 V. S Resistivity: (1. 1 2. 38) E 3 ohm. cm EPD: <1000cm^2 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces