FLAAT GaN (0001) Template( N+ ,Si-doped) on Sapphire N+ , 2"x 15um,1sp - FmGaNSionALc50D15C1US Orientation 111A TTV: = 20um

TTV: = 20um

40"(L) x 30"(W) x 30"(H)

electric PortTwo 1/4" Swagelok female gas ports are installed in the back to connect to gasses

Make wet film thickness between 10 - 5000 microns

FLAAT GaN (0001) Template( N+ ,Si-doped) on Sapphire N+ , 2"x 15um,1sp - FmGaNSionALc50D15C1US Orientation 111A TTV: = 20umResearch Grade , about 90 % usable area GaN template, N+, 2 in diameter FLAAT (Flat Layers At All Temperatures) GaN Template ( ALN buffer ) FLAAT Gallium Nitride Template, N+ (Si doped) 2 in diameter, Si doped Polarity: Ga face Carrier Concentration: > 1E18 cm^3 Nominal GaN Thickness: 15 um + 10 % Front side surface(after deposition and polish): Epi ready with, Ra< 0. 5 nm RMS (data obtained via using a white light interferometer ) Back side surface: