InAs (100), undoped 10x10x0.5mm, 1sp Boron-Nitride on Silicon Grinding balls
$148.35
Description
Grinding balls
Melting point: Does not melt congruently
Conductor type: S-C-N
0M NaPF6 in EC:DMC:EMC=1:1:1 Vol% with 1
InAs (100), undoped 10x10x0.5mm, 1sp Boron-Nitride on Silicon Grinding ballsGrowth method LEC Orientation (100) + 0. 5 Orientation Flat N A Doping Undoped Conductivity type N type Carrier Concentration <3E16 cm3 Mobility >20000 cm2 V. S EPD <5E4 cm 2 Standard thickness 500+ 20 mm Standard size 10mm x 10mm Polish one side
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, undoped 10x10x0.5mm, 1sp Boron-Nitride on Silicon Grinding balls){kind=link}
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