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SiC - 4H (0001), 2" dia. x0.3 mm th., One side polished Orientation 010 The Body is made of
SiC - 4H (0001), 2" dia. x0.3 mm th., One side polished Orientation 010 The Body is made of
$608.14
Description
The Body is made of PTFE body with Max
Inlet connections 1/4" NPT-HIP-10RV
Other GaSb
Wafer Size: 0
SiC - 4H (0001), 2" dia. x0.3 mm th., One side polished Orientation 010 The Body is made ofSpecifications of Substrate Orientation: <0001> Normal 0 MicrosoftInternetExplorer4 30? Normal 0 MicrosoftInternetExplorer4 Normal 0 MicrosoftInternetExplorer4 Edge Orientation : <11 20>1<10 10>1 Dimension: 2"+ 0. 15mm x 0. 3 + 0. 05mm Polished: one side polished Surface Roughness: < 5 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 53 A Stacking sequence: ABCB (4H)
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