SOI Wafer:5x5x0.625mm, 2 .5"m (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped) Battery Cell Tester artificial graphite has been demonstrated
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Description
artificial graphite has been demonstrated to show higher energy density
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SOI Wafer:5x5x0.625mm, 2 .5"m (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped) Battery Cell Tester artificial graphite has been demonstratedSpecifications Device Layer Size: 5mmx5mm Type Dopant: N type P doped Orientation: <1 0 0>+ 0. 5 degree Thickness: 2. 50. 5m Resistivity: 1 4 ohm cm Finish: Front Side Polished Buried Thermal Oxide: Thickness: 1. 0 um + 0. 1 um Handle Wafers: Type Dopant P type B doped Orientation <1 0 0>+ 0. 5 degree Resistivity: 10 20 ohm. cm Thickness: 625 + 15 um Finish: As received (not polished) Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner
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